FQD1N60CTM – FSC

Part Number:

FQD1N60CTM

Manufacturer:

FSC

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Ch MOSFET, 600V, 1A, 11.5Ω, DPAK

Datasheet:

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Product Details:

Overview

The FQD1N60CTM is a discrete N-Channel enhancement mode MOSFET manufactured by FSC (Fairchild Semiconductor). This power MOSFET is designed for high voltage, high-speed switching applications. It features a drain-source voltage rating of 600V, a continuous drain current of 1A, and a drain-source on-resistance (RDS(on)) of 11.5Ω. The component is packaged in a DPAK (TO-252) for surface mount assembly.

Key Features

600V Drain-Source Voltage (VDS)
1A Continuous Drain Current (ID)
11.5Ω Drain-Source On-Resistance (RDS(on))
N-Channel Enhancement Mode
DPAK (TO-252) Package

Applications

This N-Channel MOSFET is suitable for a range of power switching circuits where efficient high-voltage operation is required. Its characteristics make it useful in various electronic systems.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
High Voltage DC-DC converters