30 A, 600 V Trench Field-Stop IGBT, V Series, TO247 Package
Stock Quantity: 8
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 7.49 |
| 10+ | |
| 50+ | |
| 100+ |
8 in stock
The FGW30N60VD is a 30A, 600V Insulated Gate Bipolar Transistor (IGBT) manufactured by FUJI ELECTRIC. This device utilizes a trench field-stop structure for enhanced performance. It belongs to the V Series IGBT family and is supplied in a TO247 package, suitable for applications requiring efficient power switching.
This IGBT is designed for use in power electronics systems where efficient and reliable switching is required. Its characteristics make it suitable for a range of industrial and commercial applications involving high voltage and current control.