FDV304P – ONSEMI
Part Number:
FDV304P
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
P-Channel MOSFET, 25V, 460mA, 350mW, SOT-23-3, Surface Mount
Datasheet:
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Product Details:
The FDV304P is a P-channel enhancement-mode MOSFET fabricated using a planar process. It is rated for a maximum drain-source voltage (Vds) of -25V and a continuous drain current (Id) of -460mA when measured at an ambient temperature (Ta). The device exhibits a typical gate threshold voltage (Vgs(th)) of -1.5V. Power dissipation is rated at 350mW at Ta=25°C. The FDV304P is designed for low-side switching applications and is supplied in a space-saving SOT-23-3 (TO-236AB) surface-mount package. Its low on-resistance (Rds(on)), typically 1.2 ohms at Vgs=-4.5V, minimizes conduction losses. Gate-source voltage (Vgs) is rated for a maximum of ±8V. This MOSFET is suitable for portable applications where size and power efficiency are critical design parameters.
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