FDS8949 – ONSEMI
Part Number:
FDS8949
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
Dual N-Channel MOSFET, 40V, 6A, 29mΩ, Logic Level, PowerTrench®.
Datasheet:
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Product Details:
Overview
The FDS8949 is a dual N-Channel enhancement mode MOSFET manufactured by ONSEMI. This device features a 40V drain-source voltage rating and a continuous drain current of 6A. It utilizes ONSEMI’s PowerTrench® technology and is designed for logic level drive applications. The FDS8949 is supplied in a surface-mount package.
Key Features
- Dual N-Channel configuration
- 40V Drain-Source Voltage (VDS)
- 6A Continuous Drain Current (ID)
- 29mΩ On-Resistance (RDS(on))
- Logic Level Gate Drive
Applications
This dual N-Channel MOSFET is suitable for various power management and switching applications requiring efficient and compact designs. Its logic-level gate drive makes it compatible with microcontroller and digital logic circuits.
- DC-DC Conversion
- Load Switching
- Power Management in Portable Devices
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