FDMS6681Z – ONSEMI
Part Number:
FDMS6681Z
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
P‑Channel MOSFET, 30 V, 21.1 A/49 A, 8‑PQFN
Datasheet:
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Product Details:
Overview
The FDMS6681Z is a P-Channel enhancement mode MOSFET manufactured by ONSEMI. This device is designed for power management applications requiring efficient switching. It features a drain-source voltage rating of 30V and a continuous drain current of 21.1A, with pulsed drain current capability up to 49A. The FDMS6681Z is supplied in an 8-Pin PQFN package, optimized for thermal performance and compact board layout.
Key Features
- P-Channel MOSFET configuration
- Vds: 30V drain-source voltage
- Ids: 21.1A continuous drain current
- Low on-resistance (Rds(on))
Applications
This MOSFET is suitable for a variety of power switching and load management tasks. Its characteristics make it useful in portable devices and systems requiring high efficiency.
- DC-DC converters
- Load switching
- Power management in portable devices
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