N-Channel MOSFET, 30 V, SSOT-6
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The FDC6561AN is an N-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for low voltage, high-side load switching applications. It features a drain-source voltage rating of 30V and is supplied in a compact SSOT-6 surface mount package, suitable for space-constrained designs.
This N-Channel MOSFET is typically used in portable electronics and power management circuits. Its small size and efficient switching characteristics make it suitable for various low-power applications.