FDC2612 – ONSEMI
Part Number:
FDC2612
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
PHILIPPINES
Description:
N‑Channel MOSFET, 200 V, 1.1 A, SUPERSOT6
Datasheet:
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Product Details:
Overview
The FDC2612 is an N-Channel enhancement mode MOSFET manufactured by ONSEMI. This device is designed for power switching applications, offering a drain-source voltage rating of 200V and a continuous drain current of 1.1A. It is supplied in a compact SUPERSOT6 surface-mount package, suitable for space-constrained designs.
Key Features
- N-Channel MOSFET configuration
- 200V Drain-Source Voltage (Vds)
- 1.1A Continuous Drain Current (Id)
- Low On-Resistance (Rds(on))
- SUPERSOT6 Surface Mount Package
Applications
The FDC2612 MOSFET is commonly used in various power management and switching circuits. Its voltage and current handling capabilities make it suitable for applications requiring efficient and reliable power control. The small package size allows for integration into compact electronic devices.
- DC-DC Converters
- Load Switching
- Power Management Circuits
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