FDB8880 – FSC
N-Channel 30 V 11A (Ta), 54A (Tc) 55W (Tc) Surface Mount TO-263 (D2PAK)
Stock Quantity: 757
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.76 |
| 10+ | |
| 50+ | |
| 100+ |
757 in stock
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- 6 month warranty on all stock items
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Overview
The onsemi FDB8880 is a high-performance N-Channel Power MOSFET designed for demanding switching applications. Its primary function is to act as a voltage-controlled switch, enabling efficient power management. A critical operational characteristic is its low Rds(on) of 11.6mΩ at 40A and 10V Vgs, facilitating minimal conduction losses. However, designers must carefully consider the trade-off between its high 54A continuous drain current capability (Tc) and its 11A continuous drain current rating (Ta); thermal management is paramount to prevent junction temperature excursions beyond 175°C, especially in compact surface-mount designs where heat dissipation is limited.
Key Features
- N-Channel MOSFET, 30V Vdss
- Continuous Drain Current: 11A (Ta), 54A (Tc)
- Rds(on) Max: 11.6mΩ @ 40A, 10V
- Gate Charge (Qg) Max: 29 nC @ 10V
- Power Dissipation: 55W (Tc)
- Package: TO-263 (D2PAK), Surface Mount
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Synchronous rectification in high-efficiency DC-DC converters
- Load switching and power distribution in server infrastructure
- Motor control drivers for compact power tools
- Battery management systems requiring robust charge/discharge control
