FDB3632 – FAIRCHILD & NATIONAL SEMI

Part Number:

FDB3632

Manufacturer:

FAIRCHILD & NATIONAL SEMI

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 100 V, 12 A/80 A, D2PAK Package

Datasheet:

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Product Details:

Overview

The FDB3632 is an N-Channel enhancement mode MOSFET manufactured by Fairchild Semiconductor. This power MOSFET is designed for high-efficiency switching applications, offering a voltage rating of 100V and a continuous drain current of 12A, with pulsed current capability up to 80A. It is supplied in a D2PAK (TO-263) surface mount package.

Key Features

N-Channel Enhancement Mode
100V Drain-Source Voltage (Vds)
12A Continuous Drain Current (Id)
Low On-Resistance (Rds(on))

Applications

This N-Channel MOSFET is commonly utilized in power management circuits and switching regulators. Its characteristics make it suitable for various electronic systems requiring efficient power conversion and control.

DC-DC Converters
Motor Control
Power Supplies