FCU900N60Z – ONSEMI
Part Number:
FCU900N60Z
Manufacturer:
Date Code:
N/A
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
ONSEMI, N-Channel MOSFET, 600V, 4.5A, 52W, IPAK, Through-Hole
Datasheet:
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Stock Quantity: 171
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.34 |
| 10+ | |
| 50+ | |
| 100+ |
171 in stock
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Product Details:
Overview
The FCU900N60Z is a discrete N-Channel MOSFET manufactured by ONSEMI. This device is designed for power switching applications, operating with a drain-source voltage of 600V and a continuous drain current of 4.5A. The MOSFET has a power dissipation rating of 52W and is packaged in an IPAK through-hole configuration.
Key Features
- 600V Drain-Source Voltage (Vds)
- 4.5A Continuous Drain Current (Id)
- IPAK Through-Hole Package
- N-Channel Enhancement Mode
Applications
This N-Channel MOSFET is commonly used in circuits requiring efficient power control and switching. Its characteristics make it suitable for deployment in various electronic systems.
- Power Supplies
- Motor Control
- DC-DC Converters
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