FCHD190N65S3R0-F155 – ONSEMI
Part Number:
FCHD190N65S3R0-F155
Manufacturer:
Date Code:
N/A
RoHS:
RoHS Compliant
MSL:
COO:
VIETNAM
Description:
ONSEMI, N-Channel MOSFET, 650V, 17A (Tc), 144W (Tc), TO-247-3, Through-Hole
Datasheet:
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Stock Quantity: 210
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 4.5 |
| 10+ | |
| 50+ | |
| 100+ |
210 in stock
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Product Details:
Overview
The FCHD190N65S3R0-F155 is an N-Channel MOSFET manufactured by ONSEMI. This power MOSFET is designed for switching applications requiring a voltage rating of 650V and a continuous drain current of 17A (at a case temperature of Tc). It features a power dissipation of 144W (at Tc) and is packaged in a TO-247-3 through-hole package.
Key Features
- N-Channel enhancement mode
- 650V Drain-Source Voltage
- 17A Continuous Drain Current (Tc)
- 144W Power Dissipation (Tc)
Applications
This N-Channel MOSFET is typically used in power electronics circuits where efficient switching is required. Its voltage and current ratings make it suitable for a range of power management and control tasks.
- Power Supplies
- Motor Control
- Inverters
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