ECH8411-TL-E – SANYO

Overview

The onsemi ECH8411-TL-E is a high-performance N-channel MOSFET designed for efficient switching applications. Its critical operational characteristic is its low on-resistance (Rds(on)) of 16mΩ at 4A and 4V Vgs, enabling minimal conduction losses. A key design consideration for this device, and indeed many power MOSFETs, is the trade-off between Rds(on) and gate charge (Qg). While a lower Rds(on) is desirable for reduced conduction losses, it often correlates with higher Qg, which can increase switching losses. Engineers must carefully balance these parameters based on the specific switching frequency and voltage requirements of their application to optimize overall system efficiency.

Key Features

• N-Channel MOSFET
• Drain to Source Voltage (Vdss): 20 V
• Continuous Drain Current (Id) @ 25°C: 9 A (Ta)
• Rds On (Max) @ Id, Vgs: 16 mΩ @ 4 A, 4 V
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4 V
• Surface Mount 8-ECH (8-SMD, Flat Leads)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-side switching for efficient DC-DC converters
• Load switching in portable battery-powered devices
• Power sequencing for sensitive digital logic circuits
• High-frequency signal gating in embedded systems