DTA113ZKAT146 – ROHM

Overview

The ROHM DTA113ZKAT146 is a PNP pre-biased bipolar junction transistor (BJT) designed for simplified switching and logic applications. Its integrated base resistors (R1=1kΩ, R2=10kΩ) eliminate the need for external biasing components, reducing component count and board space. A critical design consideration is the trade-off between the fixed internal resistor ratios and achieving precise switching thresholds; designers must ensure the external circuit’s drive current is sufficient to overcome the inherent base resistance and reliably activate the transistor, especially in noisy environments.

Key Features

• PNP Pre-Biased BJT
• Collector-Emitter Breakdown Voltage: 50 V
• Continuous Collector Current (Ic): 100 mA
• Transition Frequency (fT): 250 MHz
• Power Dissipation: 200 mW
• Package: SMT3 (TO-236-3, SC-59, SOT-23-3)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Digital logic level shifting
• Simple interface circuits for microcontrollers
• Low-power switching applications
• Signal inversion in basic control loops