DS1230Y-120 – DALLAS

Electronic Components
 
Part Number:
DS1230Y-120
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
Non-RoHS
 
 
MSL:
1
 
 
COO:
PHILIPPINES
 
 
Description:

256 Kbit Parallel NVSRAM IC, 28‑EDIP Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The DS1230Y-120 is a 256 Kbit non-volatile static RAM (NVSRAM) integrated circuit manufactured by DALLAS. This device combines static RAM functionality with a non-volatile element, ensuring data retention even when power is lost. It is offered in a 28-pin EDIP (Extended Dual In-line Package) for through-hole mounting.

Key Features

  • 256 Kbit (32K x 8) memory array
  • Non-volatile data storage
  • Unlimited write cycles
  • 120ns access time

Applications

This NVSRAM is ideally suited for applications requiring reliable data storage in environments where power interruptions are possible. Its fast access time and non-volatility make it suitable for critical data logging and configuration storage.

  • Data logging systems
  • Configuration storage for embedded systems
  • Industrial control equipment
 
 
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