DMT10H015LFG-7 – DIODES INCORPORATED

Part Number:

DMT10H015LFG-7

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 100 V, PowerDI3333 Package

Datasheet:

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Product Details:

Overview

The DMT10H015LFG-7 is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for power switching applications requiring a 100V drain-source voltage rating. It is supplied in a PowerDI3333 surface-mount package, offering efficient thermal performance for demanding designs.

Key Features

N-Channel Enhancement Mode
100V Drain-Source Voltage (V_DS)
PowerDI3333 Package
Surface Mount Technology

Applications

This MOSFET is suitable for various power management and switching circuits. Its voltage and current handling capabilities make it appropriate for use in systems needing efficient power conversion and control.

DC-DC Converters
Load Switching
Power Supplies