DMN63D8LDW-7 – DIODES INCORPORATED

Part Number:

DMN63D8LDW-7

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

Dual N-Channel MOSFET, 30 V, 0.22 A, SOT363 Package

Datasheet:

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Product Details:

Overview

The DMN63D8LDW-7 is a dual N-Channel enhancement mode MOSFET from DIODES INCORPORATED. This device is designed for low voltage, low current switching applications. It features two independent N-channel MOSFETs in a single SOT363 surface mount package, enabling space-saving designs. The maximum drain-source voltage is 30V, and the continuous drain current is rated at 0.22A.

Key Features

Dual N-Channel MOSFET configuration
30V Drain-Source Voltage (V_DS)
0.22A Continuous Drain Current (I_D)
Low On-Resistance (R_DS(on))
SOT363 Surface Mount Package

Applications

This dual N-Channel MOSFET is commonly used in portable devices and other applications where space is at a premium. Its low on-resistance makes it suitable for efficient power switching and load management in various electronic circuits.

Load Switching
DC-DC Conversion
Power Management