DMN3016LDN-7 – DIODES INCORPORATED

Part Number:

DMN3016LDN-7

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

Dual N-Channel MOSFET, 30 V, 7.3 A, 20 mOhm, DFN3030-8 Package

Datasheet:

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Product Details:

Overview

The DMN3016LDN-7 is a dual N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This component features two independent MOSFETs within a single DFN3030-8 package. Each channel is rated for a drain-source voltage of 30V and a continuous drain current of 7.3A, with a typical on-state resistance of 20 mOhm.

Key Features

Dual N-Channel configuration
30V Drain-Source Voltage (V_DS)
7.3A Continuous Drain Current (I_D)
Low On-State Resistance (R_DS(on)): 20 mOhm
DFN3030-8 Package

Applications

This dual MOSFET is suitable for various power management and switching applications where space is a constraint. Its low on-resistance contributes to efficient power conversion in diverse electronic systems.

DC-DC Converters
Load Switching
Power Management Circuits