DMN26D0UFB4-7 – DIODES INCORPORATED

Part Number:

DMN26D0UFB4-7

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 20 V, 230 mA, 3‑DFN Package

Datasheet:

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Product Details:

Overview

The DMN26D0UFB4-7 is an N-Channel MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low voltage switching applications, offering a drain-source voltage rating of 20V and a continuous drain current of 230mA. It is housed in a compact 3-DFN (Dual Flat No-Lead) package, suitable for space-constrained designs.

Key Features

N-Channel Enhancement Mode
V_DS: 20V
I_D: 230mA
Low On-Resistance

Applications

This MOSFET is commonly used in portable electronic devices and other applications requiring efficient power management and small form factor. Its characteristics make it suitable for various switching and amplification tasks.

Load Switching
DC-DC Conversion
Power Management Circuits