DMG4511SK4-13 – DIODES INCORPORATED

Part Number:

DMG4511SK4-13

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N/P-Channel MOSFET, 35 V, 5.3 A, TO‑252-4L

Datasheet:

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Product Details:

Overview

The DMG4511SK4-13 is a complementary N/P-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This device features both an N-channel and a P-channel MOSFET within a single TO-252-4L package. It is designed for power management and switching applications requiring both high-side and low-side switching capabilities. The component has a drain-source voltage rating of 35V and a continuous drain current of 5.3A.

Key Features

N/P-Channel Configuration
35V Drain-Source Voltage (Vds)
5.3A Continuous Drain Current (Id)
TO-252-4L Surface Mount Package

Applications

This MOSFET is suitable for various power control and conversion circuits. Its complementary configuration makes it useful in applications where both high-side and low-side switches are needed. Typical deployments include portable devices and DC-DC converters.

DC-DC Converters
Load Switching
Power Management Circuits