DMG1023UVQ-7 – DIODES INCORPORATED

Part Number:

DMG1023UVQ-7

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

P+P Channel MOS with ESD, 20 V, 1.03 A, SOT563 Package

Datasheet:

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Product Details:

Overview

The DMG1023UVQ-7 is a dual P-Channel enhancement mode MOSFET from DIODES INCORPORATED. This device features integrated ESD protection and is designed for low voltage, low on-resistance switching applications. It is rated for a drain-source voltage of 20V and a continuous drain current of 1.03A. The component is supplied in a compact SOT563 surface mount package.

Key Features

Dual P-Channel MOSFET configuration
Drain-Source Voltage (Vds): 20V
Continuous Drain Current (Id): 1.03A
Integrated ESD Protection
SOT563 Surface Mount Package

Applications

This MOSFET is typically utilized in portable devices and other applications requiring efficient power management. Its small size and low on-resistance make it suitable for space-constrained designs.

Load Switching
Power Management Circuits
DC-DC Conversion