CY62256NLL-70SNXC – CYPRESS SEMICONDUCTOR CORP

 
Part Number:
CY62256NLL-70SNXC
 
 
Manufacturer:
 
 
Date Code:
2010/07
 
 
RoHS:
RoHS Compliant
 
 
MSL:
3
 
 
COO:
CHINA
 
 
Description:

256 Kbit Parallel SRAM IC, 28‑SOIC Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The Cypress Semiconductor CY62256NLL-70SNXC is a high-performance, asynchronous static random-access memory (SRAM) designed for embedded systems demanding rapid data access. Its 32k x 8 organization provides 256 kbit of storage with a critical 70 ns access time, enabling efficient data buffering and program execution. A key design consideration for this MoBL (Memory on the Ball) series device is the trade-off between its low operating current (typically 50 mA max) and its relatively wide operating voltage range (4.5V to 5.5V), requiring careful power supply decoupling to mitigate noise-induced read/write errors, especially in high-speed parallel interfaces.

Key Features

  • Memory Size: 256 kbit
  • Organization: 32k x 8
  • Access Time: 70 ns
  • Interface Type: Parallel, Asynchronous
  • Supply Voltage: 4.5V to 5.5V
  • Package: SOIC-28 (SMD/SMT), 2.215 g

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

  • Data buffering in industrial control systems
  • Program storage for microcontrollers in consumer electronics
  • Cache memory for embedded processors
  • Temporary data logging in portable instrumentation
 
 
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