1200 V, 50 A, 400 W IGBT Module, N-Channel
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The CM50DY-24H is an N-Channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by MITSUBISHI. This power semiconductor device is rated for a collector-emitter voltage of 1200V and a continuous collector current of 50A. The module has a power dissipation rating of 400W and is designed for high-power switching applications.
This IGBT module is commonly used in power electronics systems requiring efficient and reliable switching. Its high voltage and current ratings make it suitable for a range of industrial and commercial applications.