N-Channel IGBT, 400A I(C), 3300V V(BR)CES
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The CM400DY-66H is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Mitsubishi Electric. This power semiconductor device is designed for high-voltage, high-current switching applications. It features a collector-emitter breakdown voltage of 3300V and a continuous collector current rating of 400A. The component is supplied in a standard module package for efficient heat dissipation and ease of mounting.
This IGBT is commonly used in power conversion systems requiring efficient and reliable switching at elevated voltage and current levels. Its characteristics make it suitable for demanding industrial environments.