CM200DY-28H – MITSUBISHI

Part Number:

CM200DY-28H

Manufacturer:

MITSUBISHI

Date Code:

RoHS:

RoHS Unknown

MSL:

COO:

Description:

N‑Channel Insulated Gate Bipolar Transistor, 200 A, 1400 V

Datasheet:

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Product Details:

Overview

The CM200DY-28H is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Mitsubishi Electric. This discrete semiconductor component is designed for high-voltage, high-current switching applications. It features a collector-emitter voltage rating of 1400V and a continuous collector current of 200A. The CM200DY-28H is supplied in a standard module package.

Key Features

N-Channel IGBT Configuration
1400V Collector-Emitter Voltage
200A Continuous Collector Current
Low Saturation Voltage

Applications

This IGBT is typically employed in power electronics circuits requiring efficient and reliable switching at elevated voltage and current levels. Its characteristics make it suitable for demanding industrial and energy-related systems.

AC Motor Drives
Uninterruptible Power Supplies (UPS)
Welding Power Supplies