RF HEMT MOSFET, 28 V, 6‑QFN Package
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The CGH40006S is a discrete RF high electron mobility transistor (HEMT) from WOLFSPEED. This gallium nitride (GaN) HEMT is designed for high-efficiency amplification at 28 volts. It is supplied in a surface-mount 6-QFN package, facilitating integration into compact radio frequency circuit designs.
This RF HEMT is typically used in applications requiring efficient power amplification at radio frequencies. Its characteristics make it suitable for deployment in various communication and industrial settings.