BSZ42DN25NS3 G – INFINEON

Part Number:

BSZ42DN25NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 250 V, 5 A, 425 mOhm, S3O8 Package

Datasheet:

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Product Details:

Overview

The BSZ42DN25NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring moderate voltage and current handling capabilities. It features a drain-source voltage rating of 250V and a continuous drain current of 5A. The device exhibits a typical on-state resistance of 425 mOhm. It is supplied in an S3O8 surface-mount package.

Key Features

N-Channel Enhancement Mode
VDS = 250V
ID = 5A
RDS(on) = 425 mOhm (typical)

Applications

This MOSFET is commonly utilized in various power management and switching circuits. Its voltage and current ratings make it suitable for applications where efficient and controlled power delivery is required.

DC-DC Conversion
Solid State Relays
Motor Control