BSZ146N10LS5 – INFINEON

Part Number:

BSZ146N10LS5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

100 V, 40 A, 14.6 mOhm N‑Channel MOSFET, PQFN3x3 Package

Datasheet:

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Product Details:

Overview

The BSZ146N10LS5 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion and management. It features a drain-source voltage rating of 100V and a continuous drain current capability of 40A. The device is housed in a compact PQFN3x3 surface-mount package.

Key Features

100V Drain-Source Voltage (Vds)
40A Continuous Drain Current (Id)
14.6 mOhm On-State Resistance (Rds(on))
Logic Level Input
PQFN3x3 Package

Applications

This MOSFET is suitable for use in various power electronic circuits where efficient switching and low conduction losses are critical. Its characteristics make it well-suited for modern electronic systems.

Synchronous Rectification
DC-DC Conversion
Motor Control