BSR17A – FSC
BJT, NPN, 40V, 200mA, 300MHz, 350mW, SMT, SOT-23-3 Bipolar Transistor
Stock Quantity: 2313
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.29 |
| 10+ | |
| 50+ | |
| 100+ |
2313 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
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Overview
The onsemi BSR17A is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Its critical operational characteristic is its 40V collector-emitter breakdown voltage, enabling it to handle moderate voltage swings. A key design consideration for the BSR17A is the trade-off between its 300MHz transition frequency and its 200mA maximum collector current; achieving optimal high-frequency response may necessitate operating at lower current densities to mitigate junction capacitance effects and maintain signal integrity.
Key Features
- 40 V Collector-Emitter Breakdown Voltage (VbrCEO)
- 200 mA Maximum Continuous Collector Current (Ic)
- 300 MHz Transition Frequency (fT)
- 350 mW Maximum Power Dissipation (Pd)
- SOT-23-3 Surface Mount Package (TO-236-3, SC-59)
- 100 Minimum DC Current Gain (hFE) @ 10mA, 1V
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power signal switching in consumer electronics
- General-purpose amplification in audio pre-stages
- Current sourcing/sinking in control logic interfaces
- Bias circuitry for discrete RF amplifier stages
