BSP373N H6327 – INFINEON

Electronic Components
 
Part Number:
BSP373N H6327
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N-Channel MOSFET, 1.7 A, 100 V, SOT‑223 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSP373N H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching and amplification applications requiring moderate current and voltage handling capabilities. It features a drain-source voltage rating of 100V and a continuous drain current of 1.7A. The BSP373N H6327 is supplied in a compact SOT-223 package, suitable for surface mount assembly.

Key Features

  • N-Channel enhancement mode
  • 100V Drain-Source Voltage (Vds)
  • 1.7A Continuous Drain Current (Id)
  • SOT-223 Package

Applications

This MOSFET is commonly used in circuits where efficient switching and amplification are needed. Its voltage and current ratings make it suitable for a range of power management and control applications.

  • DC-DC converters
  • Load switching
  • Motor control circuits
  • Power supplies
 
 
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