BSO220N03MD G – INFINEON

Part Number:

BSO220N03MD G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

Dual N‑Channel MOSFET, 30 V, 7.7 A, 22 mOhm, DSO‑8 Package

Datasheet:

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Product Details:

Overview

The BSO220N03MD G is a dual N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for power switching applications requiring efficient power conversion. It features a drain-source voltage of 30V and a continuous drain current of 7.7A. The BSO220N03MD G is housed in a DSO-8 surface mount package.

Key Features

30V Drain-Source Voltage
7.7A Continuous Drain Current
22 mOhm On-State Resistance (RDS(on))
Logic Level Input
DSO-8 Surface Mount Package

Applications

This dual N-Channel MOSFET is suitable for various power management and control circuits. Its low on-resistance and compact package make it ideal for applications where space and efficiency are critical. The BSO220N03MD G can be implemented in diverse electronic systems.

DC-DC Converters
Load Switching
Power Management in Portable Devices