BSM50GD120DN2E3226 – EUPEC
Part Number:
BSM50GD120DN2E3226
Manufacturer:
Date Code:
1200
RoHS:
RoHS Unknown
MSL:
1
COO:
HUNGARY
Description:
IGBT Module, 1200 V, 50 A, 350 W, N‑Channel, ECONOPACK‑17
Datasheet:
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Product Details:
Overview
The BSM50GD120DN2E3226 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. This N-channel IGBT module features a collector-emitter voltage rating of 1200 V and a continuous collector current of 50 A. It offers a power dissipation of 350 W and is packaged in an ECONOPACK-17 housing.
Key Features
- 1200 V Collector-Emitter Voltage
- 50 A Continuous Collector Current
- 350 W Power Dissipation
- N-Channel Configuration
- ECONOPACK-17 Package
Applications
This IGBT module is typically used in applications requiring efficient high-voltage switching. Its characteristics make it suitable for deployment in various power control and conversion systems.
- AC Motor Drives
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
- Power Inverters
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