Photodiode, 950 nm, 20 ns, 120°, 2‑DIP (0.213″, 5.40 mm)
Stock Quantity: 34
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 2.92 |
| 10+ | |
| 50+ | |
| 100+ |
34 in stock
The BPW34F is a silicon PIN photodiode manufactured by OSRAM Opto Semiconductors. This component is sensitive to near-infrared radiation, with peak sensitivity at 950 nm. Its fast switching time of 20 ns makes it suitable for high-speed detection applications. It is housed in a standard 2-DIP package with a lead spacing of 0.213 inches (5.40 mm) and features a wide viewing angle of 120 degrees.
This photodiode is commonly used in various light detection and communication systems. Its spectral response and switching characteristics make it suitable for remote control devices and optical sensing applications.