BFR360F H6327 – INFINEON
Part Number:
BFR360F H6327
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
GERMANY
Description:
6 V, 35 mA NPN Radio Frequency Transistor, TSFP‑3 Package
Datasheet:
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Product Details:
Overview
The BFR360F H6327 is a discrete NPN bipolar junction transistor manufactured by Infineon Technologies. This device is designed for radio frequency applications requiring amplification and signal processing. It operates at a collector-emitter voltage of 6V and a collector current of 35mA. The BFR360F H6327 is housed in a TSFP-3 surface-mount package.
Key Features
- NPN Bipolar Technology
- 6V Collector-Emitter Voltage
- 35mA Collector Current
- TSFP-3 Package
Applications
This radio frequency transistor is suitable for several applications requiring high-frequency signal amplification and processing. Its compact size and performance characteristics make it useful in various communication and electronic systems.
- Low Noise Amplifiers (LNAs)
- Oscillators
- Mixers
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