BFP780H6327XTSA1  – INFINEON

The Infineon BFP780H6327XTSA1 is a high-linearity, low-noise silicon germanium (SiGe) heterojunction bipolar transistor (HBT) optimized for high-frequency applications up to 12 GHz. This NPN transistor features a transition frequency (fT) of 75 GHz and a maximum oscillation frequency (fmax) of 80 GHz, making it suitable for demanding RF front-end designs. It offers exceptional gain and noise figure performance at low supply voltages. The device is housed in a small-signal SMD SOT343 package and can operate reliably within an operating temperature range of –40°C to 85°C. Typical applications include low-noise amplifiers (LNAs), oscillators, and mixers in wireless communication systems, particularly in cellular infrastructure and satellite communication equipment. The BFP780H6327XTSA1 boasts a collector-emitter voltage rating of 3.6V and a collector current rating of 80mA. Its low noise figure and high gain contribute to improved receiver sensitivity and dynamic range.