BFP 620F H7764 – INFINEON
Part Number:
BFP 620F H7764
Manufacturer:
Date Code:
17
RoHS:
RoHS Compliant
MSL:
–
COO:
Description:
NPN RF BJT, SiGe, 2.3V, 80mA, 65GHz, TSFP-4, Low Noise Amplifier
Datasheet:
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Stock Quantity: 2802
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 2.08 |
| 10+ | |
| 50+ | |
| 100+ |
2802 in stock
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Product Details:
Overview
The BFP 620F H7764 is a Silicon Germanium (SiGe) NPN Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for high-frequency applications, operating up to 65 GHz. It is optimized for use in low noise amplifiers and operates with a collector-emitter voltage of 2.3V and a collector current of 80mA. The BFP 620F H7764 is packaged in a TSFP-4 (Thin Small Flat Package).
Key Features
- NPN Silicon Germanium (SiGe) Technology
- 65 GHz Transition Frequency
- 2.3V Collector-Emitter Voltage
- 80mA Collector Current
Applications
The BFP 620F H7764 transistor is typically used in radio frequency circuits requiring high gain and low noise. Its characteristics make it suitable for various wireless communication systems and high-frequency instrumentation.
- Low Noise Amplifiers (LNAs)
- Wireless Communication Systems
- High-Frequency Oscillators
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