BD140 – STMicroelectronics
BJT, PNP, 80V, 1.5A, 1.25W, SOT-32-3
Stock Quantity: 46
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.29 |
| 10+ | |
| 50+ | |
| 100+ |
46 in stock
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- 6 month warranty on all stock items
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Overview
The STMicroelectronics BD140 is a general-purpose PNP bipolar junction transistor (BJT) designed for moderate power switching and amplification tasks. Its key operational characteristic is its 80V collector-emitter breakdown voltage, enabling its use in circuits with moderate voltage swings. A critical design consideration when employing the BD140 is managing its maximum power dissipation of 1.25W; exceeding this limit, especially under continuous operation, can lead to thermal runaway and premature device failure, necessitating careful heatsinking or duty cycle management in higher-power applications.
Key Features
- PNP Bipolar Junction Transistor (BJT)
- 80V Collector-Emitter Breakdown Voltage (VCEO)
- 1.5A Continuous Collector Current (IC)
- 1.25W Maximum Power Dissipation
- Minimum DC Current Gain (hFE) of 40 at 150mA, 2V
- TO-225AA / SOT-32-3 Package (Through Hole)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency audio amplification stages
- General-purpose switching in power supply regulation
- Relay driving and solenoid control circuits
- Complementary output stages in linear amplifiers
