BD135 – MOTOROLA
NPN Bipolar Transistor, 1.5 A, 45 V, 1.25 W, SOT‑32 Package
Stock Quantity: 45
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.42 |
| 10+ | |
| 50+ | |
| 100+ |
45 in stock
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Overview
The STMicroelectronics BD135 is a general-purpose NPN bipolar junction transistor (BJT) designed for linear amplification and switching applications. Its key operational characteristic is the ability to handle up to 1.5A collector current with a 45V collector-emitter breakdown voltage, making it suitable for moderate power tasks. A critical design consideration when employing the BD135 is managing its thermal dissipation; while rated for 1.25W, exceeding this in continuous operation without adequate heatsinking can lead to premature device failure or performance degradation due to junction temperature rise, a common trade-off in cost-effective discrete power components.
Key Features
- Collector Current (Ic) Max: 1.5 A
- Collector-Emitter Breakdown Voltage (Vce): 45 V
- Maximum Power Dissipation (Pd): 1.25 W
- DC Current Gain (hFE) Min: 40 @ 150mA, 2V
- Vce Saturation (Max): 500mV @ 50mA, 500mA
- Package: TO-126-3 (SOT-32-3)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency audio amplification stages
- General-purpose switching in power supplies
- Voltage regulation circuits
- Driver stages for relays and small motors
