BCM857BS,135 – NEXPERIA
Part Number:
BCM857BS,135
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
MALAYSIA
Description:
PNP Bipolar Transistor, 0.1 A, 45 V, 2‑Element, Silicon
Datasheet:
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Product Details:
Overview
The BCM857BS,135 is a PNP bipolar junction transistor (BJT) manufactured by NEXPERIA. This device comprises two individual transistors within a single SOT-363 surface-mount package. It is designed for general-purpose amplification and switching applications, offering a collector current of 0.1 A and a collector-emitter voltage rating of 45 V. The silicon-based construction ensures reliable performance in various electronic circuits.
Key Features
- PNP Transistor Configuration
- Dual Transistor Package
- Collector-Emitter Voltage: 45V
- Collector Current: 0.1A
Applications
This dual PNP transistor is suitable for a range of low-power applications where space is a constraint. Its characteristics make it useful in circuits requiring signal amplification or electronic switching. The compact package enables high-density board designs.
- Small Signal Amplification
- Switching Circuits
- Driver Stages
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