BC846BLT1 – ONSEMI
Part Number:
BC846BLT1
Manufacturer:
Date Code:
02+
RoHS:
Non-RoHS
MSL:
1
COO:
CHINA
Description:
NPN Bipolar Transistor, 0.1 A I(C), 65 V V(BR)CEO, TO-236AB Package
Datasheet:
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Stock Quantity: 726
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.15 |
| 10+ | |
| 50+ | |
| 100+ |
726 in stock
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Product Details:
Overview
The ONSEMI BC846BLT1 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching applications. Its key operational characteristic lies in its moderate gain (hFE min 200) and a respectable 100 MHz gain-bandwidth product, making it suitable for signal conditioning. A critical design consideration when utilizing this device is managing its 225 mW power dissipation limit; exceeding this can lead to thermal runaway, especially in higher ambient temperatures, necessitating careful heatsinking or duty cycle management in demanding circuits.
Key Features
- NPN Bipolar Junction Transistor (BJT)
- Maximum DC Collector Current (Ic): 100 mA
- Collector-Emitter Voltage (VCEO): 65 V
- Gain Bandwidth Product (fT): 100 MHz
- DC Collector/Base Gain (hFE): 200 (min)
- SMD/SMT SOT-23-3 Package (2.9mm x 1.3mm x 0.94mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency signal amplification in audio pre-amplifiers.
- General-purpose switching for microcontroller interfaces.
- Bias current generation in analog signal chains.
- Small-signal coupling in intermediate frequency stages.
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