BC307B – UNKNOWN

Part Number:

BC307B

Manufacturer:

UNKNOWN

Date Code:

RoHS:

Non-RoHS

MSL:

COO:

Description:

PNP Transistor, 45V, 100mA, 130MHz, 500mW, TO-92-3, Through Hole.

Datasheet:

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Product Details:

Overview

The Central Semiconductor BC307B is a general-purpose PNP bipolar junction transistor (BJT) designed for amplification and switching applications. Its key operational characteristic lies in its moderate current handling capability (100 mA) and a respectable gain (hFE 180-460) at low voltages, making it suitable for signal level tasks. A critical design consideration when employing the BC307B in high-frequency circuits is its limited gain-bandwidth product (fT) of 130 MHz, which necessitates careful impedance matching to avoid signal attenuation and distortion, a trade-off common in cost-effective discrete transistor solutions.

Key Features

PNP Silicon Bipolar Junction Transistor
Through Hole Mounting, TO-92-3 Package
Max DC Collector Current (Ic): 100 mA
Collector-Emitter Voltage (VCEO): 25 V
DC Current Gain (hFE): 180 – 460 (at 5V, 2mA)
Power Dissipation (Pd): 500 mW

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

Low-frequency audio amplification stages
Signal switching in consumer electronics
Voltage regulation circuits with moderate current loads
Bias control for other active components in analog circuits