BAT54XV2T1G – ONSEMI

Overview

The onsemi BAT54XV2T1G is a high-performance Schottky barrier diode designed for efficient rectification and signal switching in compact electronic assemblies. Its primary advantage lies in its low forward voltage drop (Vf) and rapid reverse recovery time (trr), crucial for minimizing power loss and ensuring signal integrity in sensitive circuits. However, designers must carefully consider the trade-off between its 200mA current handling capability and potential junction temperature rise under continuous high-current operation, especially in thermally constrained applications where heatsinking might be limited.

Key Features

• 30V DC Reverse Voltage (Vr)
• 200mA Average Rectified Current (Io)
• 800mV Maximum Forward Voltage (Vf) @ 100mA
• 5ns Reverse Recovery Time (trr)
• 2µA Reverse Leakage Current @ 25V
• 10pF Capacitance @ 1V, 1MHz
• SOD-523 Package (SC-79)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-loss rectification in portable power supplies
• Signal clamping and protection in high-speed data lines
• Reverse polarity protection in battery-operated devices
• RF signal coupling and demodulation in wireless transceivers