AUIRGP50B60PD1E – INFINEON
Part Number:
AUIRGP50B60PD1E
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
MEXICO
Description:
IGBT, NPT, 600V, 75A, 390W, TO-247AD, Through-Hole
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 0
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The AUIRGP50B60PD1E is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. This NPT (Non-Punch Through) IGBT is designed for high-voltage, high-current switching applications. It features a voltage rating of 600V and a continuous collector current of 75A. The device has a power dissipation rating of 390W and is packaged in a TO-247AD through-hole package.
Key Features
- 600V Collector-Emitter Voltage
- 75A Continuous Collector Current
- 390W Power Dissipation
- NPT Technology
Applications
This IGBT is suitable for a range of power electronics applications requiring efficient switching and high voltage/current handling. Its characteristics make it useful in various industrial and commercial settings.
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
- Induction Heating
Spotted a problem with product information? – let us know
