RF MOSFET, PHEMT FET, 3 V, SOT-343
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The ATF-58143-TR1G is an RF MOSFET from AVAGO Technologies, fabricated using PHEMT (Pseudomorphic High Electron Mobility Transistor) technology. This discrete transistor is designed for low-noise amplification in radio frequency applications. It operates at a drain voltage of 3V and is supplied in a compact SOT-343 package for surface mount assembly.
This RF MOSFET is typically used in receiver front-ends and low-noise amplifier stages where minimal signal degradation is crucial. Its small size and low voltage operation make it suitable for portable and battery-powered devices.