ATF-34143-TR1G – AVAGO

Electronic Components
 
Part Number:
ATF-34143-TR1G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
THAILAND
 
 
Description:

RF pHEMT MOSFET, 4 V, SOT‑343

 
 
Datasheet:
 
 
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Product Details:

Overview

The ATF-34143-TR1G is a discrete RF pseudomorphic High Electron Mobility Transistor (pHEMT) MOSFET manufactured by AVAGO Technologies. This device is designed for low-noise amplification in radio frequency applications. It operates with a drain voltage of 4V and is supplied in a compact SOT-343 package for surface mount assembly.

Key Features

  • RF pHEMT MOSFET Technology
  • 4V Drain Voltage Operation
  • SOT-343 Package
  • Low Noise Figure

Applications

This RF MOSFET is typically used in front-end amplifiers and receiver circuits where a low noise figure is critical. It is suitable for various wireless communication systems and high-frequency instrumentation.

  • Low Noise Amplifiers (LNA)
  • Wireless Communication Receivers
  • RF Front-End Modules
 
 
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