AIMBG120R030M1 – INFINEON
Part Number:
AIMBG120R030M1
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
AUSTRIA
Description:
1200 V N‑Channel MOSFET, 30 mOhm, D2PAK Package
Datasheet:
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Product Details:
Overview
The AIMBG120R030M1 is a 1200V N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor features a low on-resistance of 30 mOhm and is supplied in a D2PAK (TO-263) package, suitable for surface mount assembly. It is designed for high-voltage switching applications requiring efficient power handling.
Key Features
- 1200V Drain-Source Voltage
- 30 mOhm On-Resistance (RDS(on))
- N-Channel Enhancement Mode
- D2PAK (TO-263) Package
Applications
This MOSFET is commonly utilized in circuits requiring high-voltage switching and efficient power conversion. Its characteristics make it suitable for various industrial and energy-related systems.
- Power Factor Correction (PFC) circuits
- Solar Inverters
- High-Voltage DC-DC Converters
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