N-Channel MOSFET, 1000V, 4A, TO-220AB Package
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The 2SK1119 is an N-Channel enhancement mode MOSFET manufactured by TOSHIBA. This device is designed for high voltage switching applications, offering a drain-source voltage rating of 1000V and a continuous drain current of 4A. It is supplied in a through-hole TO-220AB package.
This MOSFET is commonly utilized in power electronics circuits where high voltage handling is required. Its characteristics make it suitable for various industrial and commercial applications.