NPN Bipolar Power Transistor, 0.7 A I(C), 80 V V(BR)CEO, 3-Pin
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The 2SD2006T105Q is an NPN bipolar power transistor manufactured by ROHM. This device is designed for amplification and switching applications, offering a collector current (I(C)) of 0.7 A and a collector-emitter breakdown voltage (V(BR)CEO) of 80 V. It is supplied in a 3-pin package suitable for through-hole mounting.
This NPN transistor is commonly used in various electronic circuits requiring current amplification or switching. Its voltage and current ratings make it suitable for low to medium power applications.