2SC3356-T1B – NEC
Part Number:
2SC3356-T1B
Manufacturer:
Date Code:
0136
RoHS:
Non-RoHS
MSL:
1
COO:
JAPAN
Description:
NPN RF Transistor, 12 V, 7 GHz, SOT‑23‑3
Datasheet:
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Stock Quantity: 1506
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.33 |
| 10+ | |
| 50+ | |
| 100+ |
1506 in stock
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Product Details:
Overview
The 2SC3356-T1B is an NPN bipolar junction transistor manufactured by NEC. This device is designed for high-frequency amplification and oscillation applications. It operates with a collector-emitter voltage of 12V and exhibits a transition frequency of 7 GHz. The component is supplied in a compact SOT-23-3 surface-mount package.
Key Features
- NPN Silicon Bipolar Transistor
- 7 GHz Transition Frequency (fT)
- 12 V Collector-Emitter Voltage (Vceo)
- Small Signal Amplifier
Applications
This transistor is commonly used in radio frequency circuits where high gain and low noise are required. Its compact size and high-frequency characteristics make it suitable for various wireless communication systems and high-speed digital circuits.
- RF Amplifiers
- Oscillators
- Wireless Communication Devices
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