2SA1163-GR – TOSHIBA

Part Number:

2SA1163-GR

Manufacturer:

TOSHIBA

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

THAILAND

Description:

PNP Transistor, 120 V, 0.1 A, SMINI Package

Datasheet:

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Product Details:

Overview

The 2SA1163-GR is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. This transistor is designed for amplification and switching applications, featuring a collector-emitter voltage (Vceo) of 120V and a collector current (Ic) rating of 0.1A. It is supplied in a compact SMINI surface-mount package, suitable for high-density circuit board designs.

Key Features

PNP Transistor Type
Vceo: 120V
Collector Current: 0.1A
SMINI Package

Applications

This PNP transistor is commonly used in various electronic circuits requiring signal amplification or switching functionality. Its voltage and current handling capabilities make it suitable for diverse applications. The small package size allows for integration into space-constrained designs.

Audio Amplifiers
Switching Circuits
Signal Processing