2N7002E9 – GENERAL SEMICONDUCTOR

Part Number:

2N7002E9

Manufacturer:

GENERAL SEMICONDUCTOR

Date Code:

RoHS:

MSL:

COO:

Description:

60 V, 0.25 A N‑Channel MOSFET, SOT‑23 Package

Datasheet:

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Stock Quantity: 2500

Selling Unit: Each

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2500 in stock

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Product Details:

Overview

The 2N7002E9 is a 60V, 0.25A N-Channel enhancement mode MOSFET manufactured by GENERAL SEMICONDUCTOR. This transistor is designed for low voltage, high-speed switching applications. It is supplied in a compact SOT-23 surface mount package, making it suitable for space-constrained designs.

Key Features

60V Drain-Source Voltage
250mA Continuous Drain Current
Low On-Resistance (RDS(on))
Logic Level Gate Drive
SOT-23 Package

Applications

This N-Channel MOSFET is commonly used in various switching and amplification circuits. Its small size and efficient performance make it suitable for portable devices and other applications where board space is limited. It offers effective control in low-power systems.

DC-DC Converters
Load Switching
Small Signal Amplification
Motor Control